IRFW840

Features of the IRFW840 are:(1)8.0A,500V,RDS(on)=0.8@VCS=10V;(2)low gate charge (typical 41 nC);(3)low crss(typical 35 pF);(4)fast switching;(5)100% avalanche tested;(6)improved dv/dt capability.

The absolute maximum ratings of the IRFW840 can be summarized as:(1):the symbol is VDSS,the parameter is drian source voltage,the rating is 500,the unit is V;(2):the symbol is ID,the parameter is drian current continuous(TC=25),the rating is 8.0,the unit is A;(3):the symbol is ID,the parameter is drian current continuous(TC=100),the rating is 5.1,the unit is A;(4):the symbol is IDM,the parameter is drian current pulsed,the rating is 32,the unit is A;(5):the symbol is VGSS,the parameter is gate source voltage,the rating is ±30,the unit is V;(6):the symbol is EAS,the parameter is single pulsed avalanche energy,the rating is 320,the unit is mJ;(7):the symbol is IAR,the parameter is avalanche current,the rating is 8.0,the unit is A;(8):the symbol is EAR,the parameter is repetitive avalanche energy,the rating is 13.4,the unit is mJ;(9):the symbol is PD,the parameter is power dissipation (TC=25),the rating is 134,the unit is W;(10):the symbol is PD,the parameter is power dissipation (TA=25),the rating is 3.13,the unit is W;(11):the symbol is PD,the parameter is power dissipation derate above 25,the rating is 1.08,the unit is W/;(12):the symbol is TJ,Tstg,the parameter is operating and storage temperature range,the rating is -55 to +150,the unit is ;(13):the symbol is TL,the parameter is maximum lead temperature for soldering purposes,1/8" from case for 5 seconds,the rating is 300,the unit is ;