Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Improved Gate Charge· Extended Safe Operating Area· 175°C Operating Temperature· Lower Leakage Current: 10mA (Max.) @ VDS = 60V· Lower RDS(ON): 0.050m (Typ.)Specifications Symbol Characteristic V...
IRFZ24A: Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Improved Gate Charge· Extended Safe Operating Area· 175°C Operating Temperature· Lower Leakage Current...
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Symbol | Characteristic | Value | Units |
VDSS | Drain-to-Source Voltage | 60 | V |
ID | Continuous Drain Current (TC=25) | 17 | A |
Continuous Drain Current (TC=100) | 12 | A | |
IDM | Drain Current-Pulsed (1) | 68 | A |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulsed Avalanche Energy (2) | 149 | mJ |
IAR | Avalanche Current (1) | 17 | A |
EAR | Repetitive Avalanche Energy (1) | 4.4 | mJ |
dv/dt | Peak Diode Recovery dv/dt (3) | 5.5 | V/ns |
PD | Total Power Dissipation (TC=25) Linear Derating Factor |
44 0.29 |
W W/ |
TJ , TSTG | Operating Junction and Storage Temperature Range |
- 55 to +175 | |
TL | Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |