IRG4BC20UD-SPBF

Gate-Emitter Leakage Current :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.1 V
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 13 A
Package / Case : D2PAK
Power Dissipation : 60 W


Features:

• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode
• Generation 4 IGBT design provides tighter para- meter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard D2Pak package
• Lead-Free


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600	V
ID @ TC = 25°C	Continuous Drain Current	13	A
ID @ TC =100°C	Continuous Drain Current	6.5	A
ICM	Pulsed Collector Current	52	A
ILM	Clamped Inductive Load Current	52	A
IF @ TC = 100°C	Diode Continuous Forward Current	7.0	A
IFM	Diode Maximum Forward Current	52	V
VGE	Gate-to-Emitter Voltage	± 20	A
PD @ TC = 25	Maximum Power Dissipation	60	W
PD @ TC = 100	Maximum Power Dissipation	24	W
TJ	Operating Junction and	-55 to +150	W/
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)

Parameters:

Technical/Catalog Information	IRG4BC20UD-SPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	13A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 6.5A
Power - Max	60W
Mounting Type	Surface Mount
Package / Case	D²Pak, TO-263 (2 leads + tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4BC20UD SPBF IRG4BC20UDSPBF