IRG4BC30W-SPBF

Gate-Emitter Leakage Current :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.1 V
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 100 W
Package / Case : D2PAK
Continuous Collector Current at 25 C : 23 A


Features:






Specifications






Description

      IRG4BC30W-SPbF is a kind of insulated gate bipolar transistor.There are five features of IRG4BC30W-SPbF  as follows.First,it is designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications.Secondly,the industry-benchmark switching losses improve efficiently of all power supply topologies.Thirdly,it has 50% reduction of Eoff parameter.The fifth one is that it has low IGBT conduction losses.The last one is that the latest-generation IGBT design and construction offers tighter parameters distribution,exceptional reliability.Then is about the benefits.The lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode).Besides,it is of particular benefit to single-ended conventers and boost PFC topologies 150 W and higher.Furthermore,low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz).What's more,it is lead-free.
      The following is about the absolute maximum ratings of IRG4BC30W-SPbF .The maximum V_CES (Collector-to-Emitter breakdown voltage) is 600 V.The maximum I_C (continuous collector current) is 23 A at T_C=25 and 12 A at T_C=100.The maximum I_CM (Pulsed collector current)  is 92 A.The I_LM (clamped inductive load current) is 92 A.The maximum V_GE (gate-emitter voltage) is ±20 V.The E_ARV (reverse voltage avalanche energy) is 180 mJ.The maximum P_D (power dissipation) is 100 W at T_C=25 and 42 W at T_C=100.The T_J and T_STG (operating junction and storage temperature range) are both from -55 to 150.The soldering temperature for 10 seconds is 300.Then is about the thermal resistance.The maximum R_JC (Junction-to-Case) is 1.2/W.The maximum R_JA (Junction-to-Ambient) is 140/W.
      What comes next is about the electrical characteristics at T_J=25.The minimum V_(BR)CES (Collector-to-Emittor breakdown voltage) is 600 V at V_GE=0V,IC=250A.The minimum V_(BR)ECS(Emittor-to-Collector breakdown voltage) is 18 V at V_GE=0V,IC=1.0 A.The maximum I_GES (Gate-to-Emitter leakage current) is ±100 nA at V_GE=±20 V.

Parameters:

Technical/Catalog Information	IRG4BC30W-SPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	23A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 12A
Power - Max	100W
Mounting Type	Surface Mount
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4BC30W SPBF IRG4BC30WSPBF