IRG4BC30U-SPBF

Gate-Emitter Leakage Current :
Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.95 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 100 W
Package / Case : D2PAK
Continuous Collector Current at 25 C : 23 A


Features:






Specifications






Description

      The IRG4BC30U-SPbF is designed as insulated gate bipolar transistor.
      The IRG4BC30U-SPbF has four features.The first one is about its ultrafast which means optimized for high operating frequencies 8-40KHz in hard switching, >200kHz in resonant mode.The second one is generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3.The next one is it would have industry standard D2Pak package.The last one is that it would be lead-free.That are all the features.
      Some absolute maximum ratings of IRG4BC30U-SPbF have been concluded into several points as follow.The first one is about its continuous collector current @Tc=25°C which would be 23A.The second one is about its continuous collector current @Tc=100°C which would be 12A.The next one is about its pulse collector current which would be 92A.The next one is about its clamped inductive load current which would be 92A.The next one is about its gate to emitter voltage which would be +/- 20V.The next one is about its reverse voltage avalanche energy which would be 10mJ.The next one is about its maximum power dissipation which would be 100W at Tc=25°C and would be 42W at Tc=100°C.The next one is about its operating junction and storage temperature range which would be from -55 to +150°C.And so on.
      Also there are some electrical characteristics  of IRG4BC30U-SPbF @ Tj=25°C unless otherwise specified about it.The first one is about its collector to emitter breakdown voltage which would be min 600V with condition of Vge=0V, Ic=250uA.The second one is about its emitter to collector breakdown voltage which would be min 18V with condition of Vge=0V, Ic=1.0A.The next one is about its temperature coeff. of breakdown voltage which would be typ 0.63V/°C with condition of Vge=0V, Ic=1.0mA.The next one is about its temperature coeff. of threshold voltage which would be typ -13mV/°C with condition of Vce=Vge, Ic=250uA.The next one is about its forward transconductance which would be min 3.1S and typ 8.6S with condition of Vce=100V, Ic=12A.And so on.For more information please contact us.

Parameters:

Technical/Catalog Information	IRG4BC30U-SPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	23A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 12A
Power - Max	100W
Mounting Type	Surface Mount
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4BC30U SPBF IRG4BC30USPBF