Features: • 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V• Low gate charge ( typical 22 nC)• Low Crss ( typical 22 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRFW610B / IRFI610B Unit VDSS ...
IRFW630B: Features: • 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V• Low gate charge ( typical 22 nC)• Low Crss ( typical 22 pF)• Fast switching• 100% avalanche tested• Impr...
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Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved G...
Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improv...
Symbol | Parameter | IRFW610B / IRFI610B | Unit | |
VDSS |
Drain-Source Voltage |
200 | V | |
ID |
Drain Current - Continuous (TC = 25°C) |
9.0 |
A | |
5.7 |
A | |||
TDM |
Drain Current - Pulsed (Note 1) |
36 | A | |
VGSS | Gate-Source Voltage | ± 30 | V | |
EAS |
Single Pulsed Avalanche Energy (Note 2) | 160 | mJ | |
IAR |
Avalanche Current (Note 1) |
9.0 |
A | |
EAR |
Repetitive Avalanche Energy (Note 1) |
7.2 |
mJ | |
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
PD |
Power Dissipation (TA = 25°C) * |
|
W | |
Power Dissipation (TC = 25°C) |
72 |
W | ||
0.57 |
W/ | |||
TJ, Tstg |
Operating and Storage Temperature Range |
-55 to +150 |
||
TL |
Maximum lead temperature for soldering purposes, |
300 |
These N-Channel enhancement mode power field effect transistors IRFW630B are produced using Fairchild's proprietary,planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices IRFW630B are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.