IRFU3411PbF Selling Leads, Price trend, IRFU3411PbF DataSheet download, circuit diagram from SeekIC.com

Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 32 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 IDM Pulsed Drain Current 110 PD @TC = 25°C Power Dissipation 130 W Linear Derating Factor 0.83 W/°C VGS Gate...

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IRFU3411PbF: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 32 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 IDM Pulsed Drain Current ...

IRFU3411PbF Data Sheet

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Part Number:: IRFU3411PbF
Supply Ability:: 5000

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Upload time: 2024/11/21

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Specifications

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	32	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ 10V	23
I_DM	Pulsed Drain Current	110
P_D @T_C = 25°C	Power Dissipation	130	W
	Linear Derating Factor	0.83	W/°C
V_GS	Gate-to-Source Voltage	±20	V
I_AR	Avalanche Current	16	A
E_AR	Repetitive Avalanche Energy	13	mJ
dv/dt	Peak Diode Recovery dv/dt	7.0	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)

Description

Advanced HEXFET^® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized IRFU3411PbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak of IRFU3411PbF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead, I-Pak, version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

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IRFU3411PbF

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