MOSFET N-CH 75V 42A I-PAK
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Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 75V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 42A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 25A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4V @ 250µA | Gate Charge (Qg) @ Vgs: | 110nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 2400pF @ 25V | ||
Power - Max: | 110W | Mounting Type: | Through Hole | ||
Package / Case: | TO-251-3 Long Leads, IPak, TO-251AB | Supplier Device Package: | I-Pak |
Parameter |
Max. |
Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 42 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 29 | |
IDM | Pulsed Drain Current | 170 | |
PD @TC = 25°C | Power Dissipation | 110 | W |
Linear Derating Factor | 0.71 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 130 | mJ |
IAR | Avalanche Current | 25 | A |
EAR | Repetitive Avalanche Energy |
11 |
mJ |
dv/dt | Peak Diode Recovery dv/dt |
5.0 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
Mounting torque, 6-32 or M3 screw. | 10 lbf`in (1.1N`m) |
Seventh Generation HEXFET® Power MOSFETs IRFU2407 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak of IRFU2407 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.