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IRFS644B

Features: • 14A, 250V, RDS(on) = 0.28 @VGS = 10 V• Low gate charge ( typical 47 nC)• Low Crss ( typical 30 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRF644B IRFS644B Units VDSS Drain to Sour...

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SeekIC No. : 004377444 Detail

IRFS644B: Features: • 14A, 250V, RDS(on) = 0.28 @VGS = 10 V• Low gate charge ( typical 47 nC)• Low Crss ( typical 30 pF)• Fast switching• 100% avalanche tested• Improved dv...

IRFS644B Data Sheet

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Part Number:
IRFS644B
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 14A, 250V, RDS(on) = 0.28 @VGS = 10 V
• Low gate charge ( typical 47 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter IRF644B IRFS644B Units
VDSS Drain to Source Voltage 250 V
ID Continuous Drain Current(@TC = 25°C) 14 14* A
Continuous Drain Current(@TC = 100°C) 8.9 8.9* A
IDM Drain Current Pulsed (Note 1) 56 56* A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 480 mJ
IAR Avalanche Current (Note 1) 14 A
EAR Repetitive Avalanche Energy (Note 1) 13.9 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation(@TC = 25 °C) 139 43 W
- Derate above 25°C 1.11 0.35 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300
* Drain current limited by maximum junction temperature.


Description

These N-Channel enhancement mode power field effect transistors of the IRFS644B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology of the IRFS644B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.




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