MOSFET N-Chan 500V 11 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 11 A | ||
Resistance Drain-Source RDS (on) : | 0.52 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
Parameter |
Max. |
Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
11 |
A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
7.0 | |
IDM | Pulsed Drain Current |
44 | |
PD @TC = 25°C | Power Dissipation |
170 |
W |
Linear Derating Factor |
1.3 |
W/°C | |
VGS | Gate-to-Source Voltage |
± 30 |
V |
dv/dt | Peak Diode Recovery dv/dt |
6.9 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |