IRFS11N50APBF

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.52 Ohms


Features:






Specifications






Description

      The IRFS11N50APbF is designed as power MOSFET with typical applications of switch mode power supply, uninterruptable power supply, high speed power switching and it would be lead free.
      The IRFS11N50APbF has four features.The first one is that it would have low gate charge Qg results in simple drive requirement.The second one is that it would have improved gate, avalanche and dynamic dv/dt ruggedness.The third one is that it would have fully characterized capacitance and avalanche voltage and current.The fourth one is that it would be effective cross specidied.That are all the features.
      Some absolute maximum ratings of IRFS11N50APbF have been concluded into several points as follow.The first one is about its continuous drain current, Vgs @ 10V, Tc=25°C which would be 11A.The second one is about its continuous drain current, Vgs @ 10V, Tc=100°C which would be 7.0A.The third one is about its pulse drain current which would be 44A.The fourth one is about its power dissipation which would be 170W.The fifth one is about its linear derating factor which would be 1.3W/°C.The sixth one is about its gate-to source voltage which would be +/-30V.The seventh one is about its peak diode recovery dv/dt which would be 6.9 V/ns.The next one is about its operating junction and storage temperature range which would be from -55 to +150°C.The next one is about its soldering temperature, for 10 sec which would be 300°C.
      And also there are some static electrical characteristics @ Tj=25°C (unless otherwise specified) about IRFS11N50APbF.The first one is about its drain to source breakdown voltage which would be min 500V with condition of Vgs=0V, Id=250uA.The second one is about its breakdown voltage temp. coefficient which would be typ 0.060V/°C.The third one is about its static drain to source on resistance which would be max 0.52 with condition of Vgs=10V, Id=6.6A.The fourth one is about its gate threshold voltage which would be min 2.0V and max 4.0V with condition of Vds=Vgs, Id=250uA.And so on.For more information please contact us.