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IRFU2607Z

Features: Advanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ VGS = 10V, TC = 25°C 45 A ...

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SeekIC No. : 004377489 Detail

IRFU2607Z: Features: Advanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ...

IRFU2607Z Data Sheet

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Part Number:
IRFU2607Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax




Specifications

Parameter
Max.
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ VGS = 10V, TC = 25°C
45
A
Continuous Drain Current, VGS @ 10V
ID @ VGS = 10V, TC = 100°C
32
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
42
Pulsed Drain Current
PD @ TC = 25°±25
180
W
Power Dissipation
110
W/K ?
Linear Derating Factor
VGS
±20
V
Gate-to-Source Voltage
EAS
750
mJmW
Single Pulse Avalanche Energy
EAR
96g
o C
Single Pulse Avalanche Energy Tested Value 
dv/dt

96

Avalanche Current
TJ
TSTG

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy 
Mounting Torque, 6-32 or M3 screw

10 lbfin (1.1Nm)
g





Description

Specifically designed for Automotive applications of the IRFU2607Z, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.






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