MOSFET 400V N-Channel A-FET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 400 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 8.4 A | ||
Resistance Drain-Source RDS (on) : | 0.3 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220F | Packaging : | Tube |
Symbol | Characteristic | Value | Units |
VDSS | Drain-to-Source Voltage | 400 | V |
ID | Continuous Drain Current (TC=25) | 8.4 | A |
Continuous Drain Current (TC=100) | 5.3 | ||
IDM | Drain Current-Pulsed | 60 | A |
VGS | Gate-to-Source Voltage | +_ 30 | V |
EAS | Single Pulsed Avalanche Energy | 1210 | mJ |
IAR | Avalanche Current | 8.4 | A |
EAR | Repetitive Avalanche Energy | 4.9 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 4.0 | V/ns |
PD | Total Power Dissipation (TC=25 ) Linear Derating Factor |
49 0.39 |
W W/ |
TJ , TSTG | Operating Junction and Storage Temperature Range |
- 55 to +150 | |
TL | Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
Technical/Catalog Information | IRFS750A |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 400V |
Current - Continuous Drain (Id) @ 25° C | 8.4A |
Rds On (Max) @ Id, Vgs | 300 mOhm @ 4.2A, 10V |
Input Capacitance (Ciss) @ Vds | 2780pF @ 25V |
Power - Max | 49W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 131nC @ 10V |
Package / Case | TO-220F |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFS750A IRFS750A |