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IRFSL9N60A

MOSFET N-Chan 600V 9.2 Amp

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SeekIC No. : 00164902 Detail

IRFSL9N60A: MOSFET N-Chan 600V 9.2 Amp

IRFSL9N60A Data Sheet

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Part Number:
IRFSL9N60A
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 9.2 A
Resistance Drain-Source RDS (on) : 0.75 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 9.2 A
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.75 Ohms


Application

 Switch Mode Power Supply ( SMPS )
 Uninterruptable Power Supply
 High speed power switching
This device is only for through hole application.


Specifications

Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
9.2
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
5.8
IDM Pulsed Drain Current
37
PD @TC = 25°C Power Dissipation
170
W
Linear Derating Factor
1.3
W/°C
VGS Gate-to-Source Voltage
± 30
V
dv/dt Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )



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