IRFSL31N20D

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Series: HEXFET®
Power - Max: 3.1W
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 110nC @ 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Current - Continuous Drain (Id) @ 25° C: 31A
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 82 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds: 2370pF @ 25V


Application

High frequency DC-DC converters


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	16	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	14
IDM	Pulsed Drain Current Å	64
PD @TA = 25°C	Power Dissipation á	140	W
PD @TC = 25°C	Power Dissipation	0.90
	Linear Derating Factor	+30	W/°C
VGS	Gate-to-Source Voltage	2.7	V
TSTG	Peak Diode Recovery dv/dt É	-55 to + 175	V/ns
	Storage Temperature Range
TJ	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Mounting torqe, 6-32 or M3 screwÜ	10 lbf•in (1.1N•m)	N

Parameters:

Technical/Catalog Information	IRFSL31N20D
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	31A
Rds On (Max) @ Id, Vgs	82 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	2370pF @ 25V
Power - Max	3.1W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	TO-262-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRFSL31N20D IRFSL31N20D