MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 4.5 A | ||
Resistance Drain-Source RDS (on) : | 1.16 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220F | Packaging : | Tube |
Symbol | Parameter | IRF830B | IRFS830 | Units |
VDSS | Drain-Source Voltage | 500 | V | |
ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
4.5 | 4.5* | A |
2.9 | 2.9* | A | ||
IDM | Drain Current - Pulsed (Note 1) | 18 | 18* | A |
VGSS | Gate-Source Voltage | ±30 | V | |
EAS | Single Pulsed Avalanche Energy (Note 2) | 270 | mJ | |
IAR | Avalanche Current (Note 1) | 4.5 | A | |
EAR | Repetitive Avalanche Energy (Note 1) | 7.3 | mJ | |
dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns | |
PD | Power Dissipation (TC = 25) - Derate above 25 |
73 | 38 |
W |
0.58 | 0.3 | W/ | ||
TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | ||
TL | Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds |
300 |