MOSFET N-CH 200V 13A I-PAK
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Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 13 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 9.2 | |
IDM | Pulsed Drain Current | 52 | |
PD @TC = 25°C | Power Dissipation | 110 | W |
Linear Derating Factor | 0.71 | W/°C | |
VGS | Gate-to-Source Voltage | ±30 | V |
dv/dt | Peak Diode Recovery dv/dt | 2.2 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
Technical/Catalog Information | IRFU13N20D |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 13A |
Rds On (Max) @ Id, Vgs | 235 mOhm @ 8A, 10V |
Input Capacitance (Ciss) @ Vds | 830pF @ 25V |
Power - Max | 110W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 38nC @ 10V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRFU13N20D IRFU13N20D |