Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Packaging
: Tube
Continuous Drain Current
: 37 A
Gate-Source Breakdown Voltage
: 20 V
Drain-Source Breakdown Voltage
: 55 V
Package / Case
: IPAK
Features: SpecificationsDescription The IRFU1205PbF is designed as HEXFET power MOSFET.It would provide the designers with an extremely efficient for use in a wide variety of applications.
The IRFU1205PbF has five features.The first one is that it would have ultra low on-resistance.The second one is that it would have surface mount.The next one is that it would have fast switching.The next one is that it would be fully avalanche rated.The last one is that it would be lead-free.That are all the features.
Some absolute maximum ratings of IRFU1205PbF have been concluded into several points as follow.The first one is about its continuous drain current @Tc=25°C which would be 44A.The second one is about its continuous drain current @Tc=100°C which would be 31A.The next one is about its pulse drain current which would be 160A. The next one is about its power dissipation which would be 107W @Tc=25°C.The next one is about its linear derating factor which would be 0.71W/°C.The next one is about its gate to source voltage which would be +/- 20V.The next one is about its single pulse avalanche energy which would be 210mJ.The next one is about its avalanche current which would be 25A.The next one is about its repititive avalanche energy which would be 11mJ.The next one is about its peak diode recovery dv/dt which would be 5.0V/ns.The next one is about its operating junction and storage temperature range which would be from -55 to +175°C.The last one is solering temperature, for 10 seconds which would be 300°C.And so on.
Also there are some electrical characteristics @ Tj=25°C unless otherwise specified about IRFU1205PbF.The first one is about its drain to source breakdown voltage which would be min 55V with condition of Vgs=0V, Id=250uA. The second one is about its breakdown voltage temp. coefficient which would be typ 0.055V/°C.The next one is about its gate threshold voltage which would be min 2.0V and max 4.0V with condition of Vds=Vgs, Id=250uA.And so on.For more information please contact us.
Parameters: | Technical/Catalog Information | IRFU1205PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 44A |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 26A, 10V |
| Input Capacitance (Ciss) @ Vds | 1300pF @ 25V |
| Power - Max | 107W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 65nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFU1205PBF
IRFU1205PBF
|
IRFU1205PBF Data Sheet
