MOSFET N-CH 55V 42A I-PAK
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Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 55V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 42A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 14.5 mOhm @ 36A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4V @ 250µA | Gate Charge (Qg) @ Vgs: | 44nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 1380pF @ 25V | ||
Power - Max: | 110W | Mounting Type: | Through Hole | ||
Package / Case: | TO-251-3 Long Leads, IPak, TO-251AB | Supplier Device Package: | I-Pak |
Parameter |
Max. |
Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
59 |
A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
42 | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Package Limited) |
42 | |
IDM | Pulsed Drain Current |
240 | |
PD @TC = 25°C | Power Dissipation |
110 |
W |
Linear Derating Factor |
0.72 |
W/°C | |
VGS | Gate-to-Source Voltage |
± 20 |
V |
EAS (Thermally limited) | Single Pulse Avalanche Energy |
55 |
mJ
|
EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
82 | |
IAR | Avalanche Current |
See Fig.12a, 12b, 15, 16
|
A |
EAR | Repetitive Avalanche Energy |
mJ | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
Mounting Torque, 6-32 or M3 screw |
10 lbf*in (1.1N*m) |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET of the IRFU2905Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.