IRFU024NPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 16 A
Package / Case : IPAK


Features:






Specifications






Description

      The IRFR024NPbF and IRFU024NPbF has 7 features.The first one is ultra low on-resistance.The second one is suface mount (IRFR024N).The third one is straight lead (IRFU024N).The fourth one is advanced process technology.The fifth one is fast switching.The sixth one is fully avalanche rated.The seventh one is lead-free.
      Fifth generation HEXFETs IRFU024NPbF from international rectifier utilize advanced processing technologys to achieve the lowest possible on-resistance per silicon area.This benefit,combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know for,provides the designer with an extremely effcient device for use in a wide variety of applications.The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques.The straight lead version (IRFU series) is for through-hole mounting applications.Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
      The IRFR024NPbF and IRFU024NPbF has some information about absolute maximum ratings.The ID @ Tc=25,when parameter is continuous drain current,VGS @ 10 V,the max is 17,the unit is A.The ID @ Tc=100,when parameter is continuous drain current,VGS @ 10 V,the max is 12,the unit is A.The IDM,when parameter is pulsed drain current,the max is 68,the unit is A.PD @ Tc=25,when parameter is power dissiption,the max is 45,the unit is W.When parameter is linear derating factor,the max is 0.30,the unit is W/.VGS,when parameter is gate-to-source voltage,the max is +-20,the unit is V.EAS when parameter is single pulse avalanche energy,the max is 71,the unit is mJ.IAR,when parameter is avalanche current,the max is 10,the unit is A.EAR,when parameter is repetitive avalanche energy,the max is 4.5,the unit is mJ.dv/dt,when parameter is reak diode recovery dv/dt,the max is 5.0,the unit is V/ns.Tj,Tstg,when parameter is operating junction and storage temperature range,the max is -55 to +175,the unit is .When parameter is soldering temperature,for 10seconds,the max is 300(1.6mm from case),the unit is .

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameters:

Technical/Catalog Information	IRFU024NPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	17A
Rds On (Max) @ Id, Vgs	75 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	370pF @ 25V
Power - Max	45W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFU024NPBF IRFU024NPBF