IRFS820A

Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Improved Gate Charge· Extended Safe Operating Area· Lower Leakage Current : 10 A (Max.) @ VDS = 500V· Lower RDS(ON) : 2.000 (Typ.)Specifications Symbol Parameter Value Units VDSS D...

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IRFS820A Picture
SeekIC No. : 004377450 Detail

IRFS820A: Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Improved Gate Charge· Extended Safe Operating Area· Lower Leakage Current : 10 A (Max.) @ VDS = 500V· ...

floor Price/Ceiling Price

Part Number:
IRFS820A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Avalanche Rugged Technology
· Rugged Gate Oxide Technology
· Lower Input Capacitance
· Improved Gate Charge
· Extended Safe Operating Area
· Lower Leakage Current : 10 A (Max.) @ VDS = 500V
· Lower RDS(ON) : 2.000 (Typ.)



Specifications

Symbol
Parameter
Value
Units
VDSS
Drain-to-Source Voltage
500
V
ID
Continuous Drain Current (TC=25 )
Continuous Drain Current (TC=100 )
2.1
1.3
A
IDM
Drain Current-Pulsed
Gate-to-Source Voltage
8
W/
VGS
Gate-to-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy
221
mJ
IAR
Avalanche Current
2.1
A
EAR
Repetitive Avalanche Energy
3.3
mJ
dV/dt
Peak Diode Recovery dv/dt
3.5
V/ns
PD
Total Power Dissipation (TC=25 )
Linear Derating Factor
33
0.27
W
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8 " from case for 5-seconds
300



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