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IRFSL4410PBF

MOSFET MOSFT 100V 96A 10mOhm 120nC

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IRFSL4410PBF: MOSFET MOSFT 100V 96A 10mOhm 120nC

IRFSL4410PBF Data Sheet

floor Price/Ceiling Price

US $ 1.01~2.07 / Piece | Get Latest Price
Part Number:
IRFSL4410PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.07
  • $1.42
  • $1.05
  • $1.01
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 96 A
Mounting Style : Through Hole Package / Case : TO-262
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 96 A
Package / Case : TO-262


Features:

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free


Application

High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits


Specifications

Symbol
 Parameter
Max.
Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V
88
A
ID @ TC =100 Continuous Drain Current, VGS @ 10V
63
IDM Pulsed Drain Current
380
PD @TC= 25 Maximum Power Dissipation
200
W
VGS Linear Derating Factor
1.3
VGS Gate-to-Source Voltage
± 20
  
dv/dt Diode Recovery
19
W/
TJ
TSTG
 Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
  Mounting torque, 6-32 or M3 screw
10lb`in (1.1N` m)



Parameters:

Technical/Catalog InformationIRFSL4410PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C88A
Rds On (Max) @ Id, Vgs10 mOhm @ 58A, 10V
Input Capacitance (Ciss) @ Vds 5150pF @ 50V
Power - Max200W
PackagingTube
Gate Charge (Qg) @ Vgs180nC @ 10V
Package / CaseTO-262
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFSL4410PBF
IRFSL4410PBF



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