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IRFSL11N50A

MOSFET N-Chan 500V 11 Amp

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SeekIC No. : 00164697 Detail

IRFSL11N50A: MOSFET N-Chan 500V 11 Amp

IRFSL11N50A Data Sheet

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Part Number:
IRFSL11N50A
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.55 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.55 Ohms
Continuous Drain Current : 11 A
Package / Case : TO-262


Features:

· Dynamic dv/dt Rating
· Repetitive Avalanche Rated
· Fast Switching
· Ease of Paraleling
· Simple Drive Requirements


Specifications

 
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
11
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
7.8
IDM Pulsed Drain Current
44
PD @TC = 25°C Power Dissipation
190
W
  Linear Derating Factor
1.3
W/°C
VGS Gate-to-Source Voltage
±30
V
EAS Single Pulse Avalanche Energy
390
mJ
IAR Avalanche Current
11
A
EAR Repetitive Avalanche Energy
19
mJ
dv/dt Peak Diode Recovery dv/dt
4.1
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55to+175
  Soldering Temperature, for 10 seconds
300(1.6mm from case )
Thermal Resistance
 
Parameter
Typ.
Max.
Units
RJC Junction-to-Case
-
0.75
°C/W
RJA Junction-to-Ambient
-
40



Description

Third Generation HEXFET® Power MOSFETs of the IRFSL11N50A from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.




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