MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 17 A | ||
Resistance Drain-Source RDS (on) : | 165 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | IPAK | Packaging : | Tube |
Parameter |
Max. |
Units | |
ID@TC = 25 |
Continuous Drain Current,VGS@10V |
17 |
A |
ID@TC =100 |
Continuous Drain Current,VGS@10V |
12 | |
IDM |
Pulsed Drain Current |
68 | |
PD@T C= 25 |
CPower Dissipatio |
140 |
|
PD@TA = 25 |
CPower Dissipation* |
3.0 |
W |
Linear Derating Factor |
0.96 |
W/ | |
VGS dv/dt |
Gate-to-Source Voltage |
±30 8.3 |
0 V/ns |
TJ |
Operating Junction and |
-55 to + 175 |
|
TSTG |
Storage Temperature Range | ||
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
Technical/Catalog Information | IRFU15N20DPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 17A |
Rds On (Max) @ Id, Vgs | 165 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | 910pF @ 25V |
Power - Max | 3W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 41nC @ 10V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFU15N20DPBF IRFU15N20DPBF |