IRFT001

DescriptionThe IRFT001 is designed as HEXFET power modules intended for use in driving sub-fractional horsepower DC brushless motors. This three-phase bridge is offered in voltage of 60V, with current ratings up to 3.9A.The IRFT001has five applications. (1)Disk and tape drives. (2)Small appliances...

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SeekIC No. : 004377468 Detail

IRFT001: DescriptionThe IRFT001 is designed as HEXFET power modules intended for use in driving sub-fractional horsepower DC brushless motors. This three-phase bridge is offered in voltage of 60V, with curre...

floor Price/Ceiling Price

Part Number:
IRFT001
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Description

The IRFT001 is designed as HEXFET power modules intended for use in driving sub-fractional horsepower DC brushless motors. This three-phase bridge is offered in voltage of 60V, with current ratings up to 3.9A.

The IRFT001 has five applications. (1)Disk and tape drives. (2)Small appliances. (3)Robotics. (4)Printers and plotters. (5)Process controls. Those are all the main applications.

Some absolute maximum ratings of IRFT001 have been concluded into several points as follow. (1)Its breakdown voltage would be 100V. (2)Its gate to source voltage would be +/-20V. (3)Its continuous current would be 3.9A for Tc=25°C and it would be 3.5A at Tc=45°C and it would be 2.5A at Tc=100°C. (4)Its operating and storage temperature range would be from -40°C to 150°C. (5)Its lead temperature would be 300°C with 1.6mm from case for 10 seconds. (6)Its mounting torque would be from 2.5 to 3.5. (7)Its RMS isolation voltage would be 2500V. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of IRFT001 are concluded as follow. (1)Its min drain source breakdown voltage woud be 100V. (2)Its gate threshold voltage would be 2.0V to 4.0V. (3)Its max gate source leakage forward would be 500nA. (4)Its max gate source leakage reverse would be -500nA. (5)Its max zero gate voltage drain current would be 250uA and it would be 1000uA at Tj=125°C. (6)Its max static drain-source on-state resistance of die would be 0.27ohm. (7)Its max resistance contribution of package would be 0.03ohm. (8)Its min forward transconductance would be from 2.7S ro 5.5S. (9)Its typical input capacitance would be 350pF. (10)Its typical output capacitance would be 130pF. (11)Its typical reverse transfer capacitance would be from 24pF to 51pF. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!




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