IRFS820B

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Continuous Drain Current : 2.5 A
Resistance Drain-Source RDS (on) : 2.6 Ohms


Features:

• 2.5A, 500V, RDS(on) = 2.6Ω @VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	IRF820B	IRF820B	Units
VDSS	Drain-Source Voltage	500		V
ID	Drain Current - Continuous (TC = 25) - Continuous (TC = 100)	2.5	2.5*	A
		1.6	1.6*	A
IDM	Drain Current - Pulsed (Note 1)	8.0	8.0*	A
VGSS	Gate-Source Voltage	±30		V
EAS	Single Pulsed Avalanche Energy (Note 2)	200		mJ
IAR	Avalanche Current (Note 1)	2.5		A
EAR	Repetitive Avalanche Energy (Note 1)	4.9		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5		V/ns
PD	Power Dissipation (TC = 25) - Derate above 25	49	33	W
		0.39	0.27	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150
TL	Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds	300

Description

These N-Channel enhancement mode power field effect transistors of IRFS820B are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology IRFS820B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.