IRFS740B

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 10 A
Package / Case : TO-220F
Resistance Drain-Source RDS (on) : 0.54 Ohms
Drain-Source Breakdown Voltage : 400 V


Features:

• 10A, 400V, RDS(on) = 0.54Ω @V_GS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	IRF730B	IRFS730B	Units
VDSS	Drain-Source Voltage	400		V
ID	Drain Current - Continuous (TC = 25)               - Continuous (TC = 100)	10	10 *	A
		6.3	6.3 *	A
IDM	Drain Current - Pulsed	40	40 *	A
VGSS	Gate-Source Voltage	± 30		V
EAS	Single Pulsed Avalanche Energy	450		mJ
IAR	Avalanche Current	10		A
EAR	Repetitive Avalanche Energy	13.4		mJ
dv/dt	Peak Diode Recovery dv/dt	5.5		V/ns
PD	Power Dissipation (TC = 25)       - Derate above 25	134	44	W
		1.08	0.35	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

Description

These N-Channel enhancement mode power field effect transistors IRFS740B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology IRFS740B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.