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IRFS654B

Features: • 21A, 250V, RDS(on) = 0.14 @VGS = 10 V• Low gate charge ( typical 95 nC)• Low Crss ( typical 60 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications PARAMETER SYMBOL IRF654B IRFS654B UNIT Drain-Source Voltage...

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IRFS654B: Features: • 21A, 250V, RDS(on) = 0.14 @VGS = 10 V• Low gate charge ( typical 95 nC)• Low Crss ( typical 60 pF)• Fast switching• 100% avalanche tested• Improved dv...

IRFS654B Data Sheet

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Part Number:
IRFS654B
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 21A, 250V, RDS(on) = 0.14 @VGS = 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

PARAMETER SYMBOL IRF654B IRFS654B UNIT
Drain-Source Voltage VDSS 250 V
Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 ID 21 21* A
13.3 13.3*
Drain Current - Pulsed (Note 1) IDM 84 84* A
Gate-Source Voltage VGSS ± 30 V
Avalanche Current (Note 1) IAR 21 A
Single Pulsed Avalanche Energy (Note 2) EAS 700 mJ
Repetitive Avalanche Energy (Note 1) EAR 15.6 mJ
Power Dissipation (TC = 25)
- Derate above 25		 PD 156 50 W
1.25 0.4 W/
Peak Diode Recovery dv/dt (Note 3) dv/dt 5.5 V/ns
Operating and Storage Temperature Range TJ, TSTG -55 to +150
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 TL 300
* Drain current limited by maximum junction temperature.


Description

These N-Channel enhancement mode power field effect transistors of the IRFS654B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology of the IRFS654B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.




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