IRFS640

The IRFS640 is designed as one kind of N-channel power MOSFETS with some features such as:(1)lower RDS(on);(2)improved inductive ruggedness;(3)fast switching times;(4)rugged polysilicon gate cell structure;(5)lower input capacitance;(6)extended safe operating area;(7)improve high temperature reliability.

The absolute maximum ratings of the IRFS640 can be summarized as:(1)drain-source voltage:200 Vdc;(2)drain-gate voltage:200 Vdc;(3)gate-source voltage: +/-20 Vdc;(4)continuous drain current Tc=25:9.8 Adc;(5)continuous drain current Tc=100:6.8 Adc;(6)drain current-pulsed:72 Adc;(7)gate current-pulsed: +/-1.5 Adc;(8)single pulsed avalanche energy:178 mJ;(9)avalanche current:9.8 A;(10)total power dissipation at Tc=25:40 Watts;(11)derate above 25: 0.32 W/;(12)operating and storage junction temperature range:-55 to +150;(13)maximum lead temperature for soldering purposes,1/8" from case for 5 seconds:300.If you want to know more information such as the electrical characteristics about IRFS640,please download the datasheet in www.seekic.com and www.chinaicmart.com .