IRFU230B

Features: • 7.5A, 200V, RDS(on) = 0.4 @VGS = 10 V• Low gate charge ( typical 22 nC)• Low Crss ( typical 22 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter Value Units VDSS Drain-Source ...

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SeekIC No. : 004377482 Detail

IRFU230B: Features: • 7.5A, 200V, RDS(on) = 0.4 @VGS = 10 V• Low gate charge ( typical 22 nC)• Low Crss ( typical 22 pF)• Fast switching• 100% avalanche tested• Improved dv...

floor Price/Ceiling Price

Part Number:
IRFU230B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/7

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Product Details

Description



Features:

• 7.5A, 200V, RDS(on) = 0.4 @VGS = 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 22 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol
Parameter
Value
Units
VDSS
Drain-Source Voltage
200
V
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
7.5
A
4.8
A
IDM
Drain Current - Pulsed
30
A
VGSS
Gate-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
160
mJ
IAR
Avalanche Current
7.5
A
EAR
Repetitive Avalanche Energy
5.0
mJ
dv/dt
Peak Diode Recovery dv/dt
5.5
V/ns
PD
Power Dissipation (TA = 25°C)
2.5
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
50
W
0.4
W/°C
TJ,Tstg
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power field effect transistors IRFU230B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology IRFU230B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.




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