Features: • 7.5A, 200V, RDS(on) = 0.4 @VGS = 10 V• Low gate charge ( typical 22 nC)• Low Crss ( typical 22 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter Value Units VDSS Drain-Source ...
IRFU230B: Features: • 7.5A, 200V, RDS(on) = 0.4 @VGS = 10 V• Low gate charge ( typical 22 nC)• Low Crss ( typical 22 pF)• Fast switching• 100% avalanche tested• Improved dv...
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Symbol |
Parameter |
Value |
Units |
VDSS |
Drain-Source Voltage |
200 |
V |
ID |
Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
7.5 |
A |
4.8 |
A | ||
IDM |
Drain Current - Pulsed |
30 |
A |
VGSS |
Gate-Source Voltage |
±30 |
V |
EAS |
Single Pulsed Avalanche Energy |
160 |
mJ |
IAR |
Avalanche Current |
7.5 |
A |
EAR |
Repetitive Avalanche Energy |
5.0 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
5.5 |
V/ns |
PD |
Power Dissipation (TA = 25°C) |
2.5 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
50 |
W | |
0.4 |
W/°C | ||
TJ,Tstg |
Operating and Storage Temperature Range |
-55 to +150 |
°C |
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors IRFU230B are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology IRFU230B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.