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IRFU220B

Features: • 4.6A, 200V, RDS(on) = 0.8 @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 10 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter Value Units VDSS Drain-Source ...

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IRFU220B: Features: • 4.6A, 200V, RDS(on) = 0.8 @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 10 pF)• Fast switching• 100% avalanche tested• Improved dv...

IRFU220B Data Sheet

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Part Number:
IRFU220B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• 4.6A, 200V, RDS(on) = 0.8 @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol
Parameter
Value
Units
VDSS
 Drain-Source Voltage
200
V
ID
 Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
4.6
A
2.9
A
IDM
 Drain Current - Pulsed
18
A
VGSS
 Gate-Source Voltage
±30
V
EAS
 Single Pulsed Avalanche Energy
65
mJ
IAR
 Avalanche Current
4.6
A
EAR
 Repetitive Avalanche Energy
4.0
mJ
dv/dt
 Peak Diode Recovery dv/dt
5.5
V/ns
PD
 Power Dissipation (TA = 25°C)
2.5
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
40
W
0.32
W/°C
TJ,Tstg
 Operating and Storage Temperature Range
-55 to +150
°C
TL
 Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power field effect transistors IRFU220B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology IRFU220B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.




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