IRFU18N15D

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Series: HEXFET®
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25° C: 18A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 43nC @ 10V
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power - Max: 110W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Input Capacitance (Ciss) @ Vds: 900pF @ 25V
Rds On (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V


Application

·High frequency DC-DC converters

·High frequency DC-DC converters




Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	18	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	13
IDM	Pulsed Drain Current	72
PD @TC = 25°C	Power Dissipation	110	W
	Linear Derating Factor	0.71	W/°C
VGS	Gate-to-Source Voltage	±30	V
dv/dt	Peak Diode Recovery dv/dt	3.3	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)