MOSFET N-CH 200V 24A TO-262
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Symbol |
Parameter |
Max. |
Units |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
24 |
A |
ID @ TC =100 | Continuous Drain Current, VGS @ 10V |
17 | |
IDM | Pulsed Drain Current |
96 | |
PD @TA= 25 | Power Dissipation |
3.8 |
W
|
PD @TC= 25 | Power Dissipation |
170 | |
Linear Derating Factor |
1.1 |
W/ | |
VGS | Gate-to-Source Voltage |
± 30 |
V |
dv/dt | Peak Diode Recovery dv/dt |
3.3 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
Mounting torqe, 6-32 or M3 screw | 10 lbf•in (1.1N•m) |
Technical/Catalog Information | IRFSL23N20DPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 24A |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 14A, 10V |
Input Capacitance (Ciss) @ Vds | 1960pF @ 25V |
Power - Max | 3.8W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 86nC @ 10V |
Package / Case | TO-262-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFSL23N20DPBF IRFSL23N20DPBF |