Position: Home  > All Categories> Integrated Circuits (ICs) > IRFU2605

IRFU2605

Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 19 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 IDM Pulsed Drain Current 76 PD @TC = 25°C Power Dissipation 50 W PD @TC = 25°C Power Dissipatio...

product image

IRFU2605 Picture
See larger image
SeekIC No. : 004377488 Detail

IRFU2605: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 19 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 IDM Pulsed Drai...

IRFU2605 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRFU2605
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Specifications

 
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
19
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
12
IDM Pulsed Drain Current
76
PD @TC = 25°C Power Dissipation
50
W
PD @TC = 25°C Power Dissipation (PCB Mount)**
3.1
  Linear Derating Factor
0.40
W/°C
  Linear Derating Factor (PCB Mount)**
0.025
VGS Gate-to-Source Voltage
±20
V
EAS Single Pulse Avalanche Energy
100
mJ
IAR Avalanche Current
12
A
EAR Repetitive Avalanche Energy
5.0
mJ
dv/dt Peak Diode Recovery dv/dt
4.5
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55to+175
°C
  Soldering Temperature, for 10 seconds
300(1.6mm from case )
VESD Human Body Model, 100pF, 1.5K
2000
V
Thermal Resistance
 
Parameter
Typ.
Max.
Units
RJC Junction-to-Case
-
2.5
°C/W
RJA Junction-to-Ambient (PCB mount) **
-
40
RJA Junction-to-Ambient
-
62
** When mounted on 1" square PCB (FR-4 or G-10 Material).
     For recommended footprint and soldering techniques refer to application note #AN-994.


Description

Fourth Generation HEXFETs from International Rectifier IRFU2605 utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These benefits, combined with the ruggedized device design that HEXFETs are known for, provide the designer with extremely efficient and reliable device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) of IRFU2605 is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Test Equipment
TOP853
TOP2005
Discrete Semiconductor Products
T508N12TOF
MUR20040
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
View more