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IRFS840A

Features: ·Avalanche Rugged Technology·Rugged Gate Oxide Technology·Lower Input Capacitance·Improved Gate Charge·Extended Safe Operating Area·Lower Leakage Current : 10 mA (Max.) @ VDS = 500V·Lower RDS(ON) : 0.638 W (Typ.)Specifications Symbol Parameter Value Units VDSS Drain...

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SeekIC No. : 004377452 Detail

IRFS840A: Features: ·Avalanche Rugged Technology·Rugged Gate Oxide Technology·Lower Input Capacitance·Improved Gate Charge·Extended Safe Operating Area·Lower Leakage Current : 10 mA (Max.) @ VDS = 500V·Lower ...

IRFS840A Data Sheet

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Part Number:
IRFS840A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/7

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Product Details

Description



Features:

·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Lower Leakage Current : 10 mA (Max.) @ VDS = 500V
·Lower RDS(ON) : 0.638 W (Typ.)


Specifications

Symbol
Parameter
Value
Units
VDSS
 Drain-to-Source Voltage
500
V
ID
 Continuous Drain Current (TC=25 )
Continuous Drain Current (TC=100 )
4.6
2.9
A
IDM
Drain Current-Pulsed
Gate-to-Source Voltage
32
W/
VGS
Gate-to-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy
647
mJ
IAR
Avalanche Current
4.6
A
EAR
Repetitive Avalanche Energy
4.4
mJ
dV/dt
Peak Diode Recovery dv/dt
3.5
V/ns
PD
 Total Power Dissipation (TC=25 )
Linear Derating Factor
44
0.35
W
TJ
Operating Junction
-55 to 200
TSTG
Storage Temperature Range
TL
 Maximum Lead Temp. for Soldering
Purposes, 1/8 " from case for 5-seconds
300



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