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Vendor:Other Category:Other
The HWS447 is a GaAs PHEMT MMIC SPDT switch operating at DC-6 GHz in a low cost miniature QFN12L (3 x 3 mm) plastic lead (Pb) free package. It features low insertion loss and high isolation with very low DC power consump...
Vendor:Other Category:Other
The HWS443 is a GaAs MMIC SPDT switch in a low cost SOT-26 plastic lead (Pb) free package. It features low insertion loss with very low DC power consumption. This general purpose switch can be used in analog and digital ...
Vendor:Other Category:Other
The HWS436 is a GaAs PHEMT MMIC DPDT switch operating at DC-6 GHz in a low cost miniature QFN12L (3 x 3 mm) plastic lead (Pb) free package. It features low insertion loss and high isolation with very low DC power consump...
Vendor:Other Category:Other
The HWS435 is a GaAs SPDT switch operating at DC-2.5 GHz in a low cost SOT-363 plastic lead (Pb) free package. It features low insertion loss with very low DC power consumption. This switch can be used in IEEE 802.11b/g ...
Vendor:Other Category:Other
The HWS434 is a GaAs MMIC SPDT terminated (non-reflective) switch in a low cost SOP-8 plastic lead (Pb) free package. It features low insertion loss and high isolation with very low DC power consumption. Typical applicat...
Vendor:Other Category:Other
The HWS433 is a GaAs PHEMT 2x2 switch matrix operating at 0.95 to 2.15 GHz in a low cost TSSOP-16 plastic lead (Pb) free package. Any of the two inputs can be directed to any of the two outputs. It is suitable for use in...
Vendor:Other Category:Other
The HWS432 is a GaAs PHEMT MMIC SPDT switch operating at DC-6 GHz in a low cost miniature QFN12L (3 x 3 mm) plastic lead (Pb) free package. The HWS432 features low insertion loss and high isolation with very low DC power...
Vendor:Other Category:Other
The HWS429 is a GaAs SPDT terminated (non-reflective) switch operating at DC-3 GHz in a low cost QFN12L (3x3 mm) plastic lead (Pb) free package. The HWS429 features low insertion loss and high isolation with very low DC ...
Vendor:Other Category:Other
The HWS428 is a GaAs PHEMT 4x2 switch matrix operating at 0.9 to 3.0 GHz in a low cost TSSOP16 plastic lead (Pb) free package. Any of the four inputs can be directed to any of the two outputs. It is suitable for use in D...
Vendor:Other Category:Other
The HWS426 is a GaAs SPDT switch operating at DC-6 GHz in a low cost SOT-363 plastic lead (Pb) free package. It features low insertion loss with very low DC power consumption. This switch can be used in IEEE 802.11a/b/g ...
Vendor:Other Category:Other
The HWS421 is a GaAs MMIC SPDT high power switch in a low cost SOT-26 plastic lead (Pb) free package. It features low insertion loss with very low DC power consumption. This high power switch can be used in GSM and PCS s...
Vendor:Other Category:Other
The HWS420 is a GaAs PHEMT MMIC DPDT switch operating at DC-6 GHz in a low cost miniature QFN12L (3 x 3 mm) plastic package. It features low insertion loss and high isolation with very low DC power consumption. This swit...
Vendor:Other Category:Other
The HWS419 is a GaAs PHEMT MMIC DP4T switch operating at DC-6GHz in a low cost miniature QFN16L (4 x 4 mm) plastic package. The HWS419 combines one DPDT switch and two SPDT switches in a single IC and features low insert...
Vendor:Other Category:Other
The HWS418 is a GaAs SPDT switch operating at DC-2.5 GHz in a low cost SOT-363 plastic lead (Pb) free package. It features low insertion loss with very low DC power consumption. This general purpose switch can be used in...
Vendor:Other Category:Other
The HWS417 is a GaAs PHEMT 2x2 switch matrix operating at 0.95 to 2.15 GHz in a low cost TSSOP-16 plastic package. Any of the two inputs can be directed to any of the two outputs. It is suitable for use in Direct Broadca...
Vendor:Other Category:Other
The HWS416 is a GaAs SPDT switch operating at DC-2.5 GHz in a low cost SOT-26 plastic lead (Pb) free package. It features low insertion loss with very low DC power consumption. This general purpose switch can be used in ...
Vendor:Other Category:Other
The HWS415 is a GaAs PHEMT MMIC DPDT switch operating at DC-6 GHz in a low cost miniature QFN12L (3 x 3 mm) plastic lead (Pb) free package. It features low insertion loss and high isolation up to 6 GHz with very low DC p...
Mfg:HEXAWAVE Pack:TSSOP-16 D/C:05+ Vendor:Other Category:Other
The HWS412 is a GaAs PHEMT 4x2 switch matrix operating at 0.9 to 3.0 GHz in a low cost TSSOP16 plastic package. Any of the four inputs can be directed to any of the two outputs. It is suitable for use in Direct Broadcast...
Vendor:Other Category:Other
The HWS411 is a GaAs PHEMT MMIC DPDT switch operating at DC-6 GHz in a low cost miniature QFN12L (3 x 3 mm) plastic package. The features low insertion loss and high isolation up to 6 GHz with very low DC power consumpti...
Vendor:Other Category:Other
The HWS410 is a GaAs PHEMT MMIC DPDT switch operating at DC-6 GHz in a low cost miniature QFN12L (3 x 3 mm) plastic lead (Pb) free package. The features low insertion loss and high isolation with very low DC power consum...
Vendor:Other Category:Other
The HWS408 is a GaAs SPDT switch operating at DC-3 GHz in a low cost SOT-363 plastic lead (Pb) free package. The features low insertion loss with very low DC power consumption. This switch can be used in many wireless di...
Vendor:Other Category:Other
The HWS407 is a GaAs PHEMT MMIC DPDT switch operating at DC-6 GHz in a low cost miniature QFN12L (3 x 3 mm) plastic package. The features low insertion loss and high isolation with very low DC power consumption. This swi...
Vendor:Other Category:Other
The HWS400 is a GaAs MMIC SPDT terminated (non-reflective) switch in a low cost QFN12L (3x3 mm) plastic package and can be used in both 50 ohm and 75 ohm systems. The HWS400 features low insertion loss and high isolation...
Vendor:Other Category:Other
The HWS398 is a GaAs SPDT switch operating at DC-6 GHz in a low cost SOT-363 plastic package.The HWS398 features low insertion loss with very low DC power consumption. This switch can be used in IEEE 802.11a/b/g WLAN sys...
Vendor:Other Category:Other
The HWS388 is a GaAs PHEMT 4x2 switch operating at 0.95 to 2.15 GHz in a low cost TSSOP16 plastic package. Any of the four inputs can be directed to any of the two outputs. It is suitable for use in Direct Broadcast Sate...
Mfg:HEXAWAVE Pack:QFN-12 D/C:04+ Vendor:Other Category:Other
The HWS383 is a GaAs PHEMT MMIC DPDT switch operating at DC-6 GHz in a low cost miniature QFN12L (3 x 3 mm) plastic package. The features low insertion loss and high isolation with very low DC power consumption. This swi...
Vendor:Other Category:Other
The HWS382 is a GaAs PHEMT MMIC SPDT switch operating at DC-6 GHz in a low cost miniature QFN12L (3 x 3 mm) plastic package. The HWS382 features low insertion loss and high isolation with very low DC power consumption. T...
Vendor:Other Category:Other
The HWS379 is a GaAs PHEMT MMIC DP4T switch operating at DC-6 GHz in a low cost miniature QFN16L (4 x 4 mm) plastic package. The HWS379 combines one DPDT switch and two SPDT switches in a single IC and features low inser...
Vendor:Other Category:Other
The HWS332 is a GaAs MMIC SPDT terminated switch in a low cost SOP-8 plastic package. The features low insertion loss and high isolation with very low DC power consumption. Typical applications include radio and cellular...
Vendor:Other Category:Other
The HWS303 is a kind of GaAs MMIC SPDT switch in a low cost SOT-363 plastic package. The switch can be used in analog and digital wireless communication systems.
There are some features about HWS303 as follows: (1)low ...
Vendor:Other Category:Other
The HWS2702 is an integrated GaAs SPDT Switch designed for transceivers operating in DC to 2000 MHz frequency range. It is suitable for 900 MHz cellular phones, CT1, CT2, DECT, and Wireless LAN applications.
Vendor:Other Category:Other
The HWS2352 is an integrated GaAs SPDT terminated switch. It is suitable for cellular phones, CT1, CT2, DECT, and Wireless LAN applications.
Vendor:Other Category:Other
The HWL36YRF is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package.
Vendor:Other Category:Other
The HWL36YRA is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package.
Vendor:Other Category:Other
The HWL34YRF is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package.
Vendor:Other Category:Other
The HWL34YRA is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package.
Vendor:Other Category:Other
The HWL34NC is a power GaAs FET designed for various L-band & S-band applications.
Vendor:Other Category:Other
The HWL32NPA is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.
Vendor:Other Category:Other
The HWL30YRF is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package.
Vendor:Other Category:Other
The HWL30YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package.
Vendor:Other Category:Other
The HWL30NPA is a Medium Power GaAs FET using surface mount type plastic package for various L-band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.
Vendor:Other Category:Other
Vendor:Other Category:Other
The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package.
Vendor:Other Category:Other
The HWL27NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.
Vendor:Other Category:Other
The HWL27NC is a medium power GaAs FET designed for various L-band & S-band applications.
Vendor:Other Category:Other
The HWL26YC is a medium power GaAs FET designed for various L-band & S-band applications.
Vendor:Other Category:Other
The HWL26NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.
Vendor:Other Category:Other
The HWL26NPA is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.
Vendor:Other Category:Other
The HWL26NC is a medium power GaAs FET designed for various L-band & S-band applications.
Vendor:Other Category:Other
The HWL23NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications
Vendor:Other Category:Other
• 24 Vdc Supply, 40 to 1000 MHz, CATV Forward Amplifier
Vendor:Other Category:Other
Vendor:Other Category:Other
The HWF1687RA is a medium power GaAs MESFET designed for various RF and Microwave applications. It is presently offered in a low cost, surface-mountable ceramic package.
Vendor:Other Category:Other
Designed for various RF and Microwave applications, the HWF1686YC is a medium power GaAs MESFET chip with 2 mm gate width and 0.7 m gate length.
Vendor:Other Category:Other
Vendor:Other Category:Other
The HWF1686RA is a medium power GaAs MESFET designed for various RF and Microwave applications. It is presently offered in a low cost, surface-mountable ceramic package.
Vendor:Other Category:Other
Designed for various RF and Microwave applications, the HWF1686NC is a medium power GaAs MESFET chip with 2 mm gate width and 0.7 m gate length.
Vendor:Other Category:Other
Vendor:Other Category:Other
The HWF1682RA is a high power GaAs MESFET designed for various RF and Microwave applications.HWF1682RA is presently offered in a low cost, surface-mountable ceramic package.
Vendor:Other Category:Other
Vendor:Other Category:Other
The HWE02050 is a kind of DC-DC converter.
There are some HWE02050 features as follows: (1)wide-range input voltage; (2)adjustable output voltage (60%-110%); (3)parallel operation with load sharing; (4)remote ON/OFF; (5...
Vendor:Other Category:Other
The HWD4558 consists of two high performance operational amplifiers. The IC features high gain, high input resistance, excellent channel separation, wide range of operating voltage and internal frequency compensation. It...
Vendor:Other Category:Other
HWD232 is interface chip designed for RS-232 and V.28 , charge send&drain and voltage conversion circuit built in the chip can convert +5 V power input to ± 10V level required for RS-232 , and therefore is par...
Vendor:Other Category:Other
The HWD2190 is an audio power amplifier primarily designed for demanding applications in mobile phones and other portable communication device applications. It is capable of delivering 1 watt of continuous average power ...
Pack:SOP Vendor:Other Category:Other
The HWD2182 is a single-ended audio power amplifier capable of delivering 250mW of continuous average power into an 8W load with 1% THD+N from a 5V power supply. audio power amplifiers were designed specifically to provi...
Pack:SOP8 Vendor:Other Category:Other
The HWD2171 is a mono bridged audio power amplifier capable of delivering 3W of continuous average power into a 3W load with less than 10% THD when powered by a 5V power supply (Note 1). To conserve power in portable app...
Pack:SOP Vendor:Other Category:Other
The HWD2161 is a mono bridged audio power amplifier capable of delivering 1.1W of continuous average power into a 1.1W load with less than 1% THD when powered by a 5V power supply.
HWD2161 audio power amplifiers are ...
Pack:MSOP10 Vendor:Other Category:Other
The HWD2111 is a dual audio power amplifier capable of delivering 105mW per channel of continuous average power into a 16 load with 0.1% (THD+N) from a 5V power supply. audio power amplifiers were designed specifically t...
Mfg:SOP8/SOP Pack:89070 D/C:05+ Vendor:Other Category:Other
The HWD2108 is a dual audio power amplifier capable of delivering 105mWper channel of continuous average power into a 16W load with 0.1%(THD+N) from a 5V power supply. audio power amplifiers were designed specifically to...
Vendor:Other Category:Other
The HWD20011/HWD2001/HWD20012 compact, high effIciency, step-up DC-DC converters fit in small MSOP packages. They feature a built-in synchronous rectifier, which improves efficiency and reduces size and cost y eliminatin...
Vendor:Other Category:Other
The HWD20011/HWD2001/HWD20012 compact, high effIciency, step-up DC-DC converters fit in small MSOP packages. They feature a built-in synchronous rectifier, which improves efficiency and reduces size and cost y eliminatin...
Vendor:Other Category:Other
The HWD20011/HWD2001/HWD20012 compact, high effIciency, step-up DC-DC converters fit in small MSOP packages. They feature a built-in synchronous rectifier, which improves efficiency and reduces size and cost y eliminatin...
Vendor:Other Category:Other
The HWD075DGE series provides onboard conversion of standard telecom and datacom input voltages into two isolated low-voltage outputs. These products offer a unique combination of wide input range, low profile, and high ...
Vendor:Other Category:Other
The HWC34NC is a power GaAs FET designed for various L-band & S-band applications.
Vendor:Other Category:Other
The HWC30NC is a medium power GaAs FET designed for various L-band & S-band applications.
Vendor:Other Category:Other
The HWC27YC is a medium power GaAs FET designed for various RF and microwave applications.
Vendor:Other Category:Other
The HWC27NC is a medium power GaAs FET designed for various L-band & S-band applications.
Vendor:Other Category:Other
The Intersil HWB3163-EVAL WLAN PC Card (Note 1) is a complete wireless high speed Network Interface Card (NIC) utilizing the Intersil PRISM II Direct Sequence Spread Spectrum Wireless Transceiver chip set. It provides a ...
Vendor:Other Category:Other
PerkinElmer manufactures a wide variety of hot wire actuators and initiators for demanding Aerospace, Department of Energy, and Military systems.
Vendor:Other Category:Other
This revolutionary package design of HW941A allows the lighting designer to reduce the number of LEDs required and provide a more uniform and unique illuminated appearance than with other LED solutions.This package LEDs ...
Vendor:Other Category:Other
Vendor:Other Category:Other
This revolutionary package design of HW331A allows the lighting designer to reduce the number of LEDs required and provide a more uniform and unique illuminated appearance than with other LED solutions.This package LEDs ...
Vendor:Other Category:Other
This revolutionary package design of HW321A allows the lighting designer to reduce the number of LEDs required and provide a more uniform and unique illuminated appearance than with other LED solutions.This package LEDs ...
Mfg:ASAHIKASEI Pack:SMD4 D/C:3 Vendor:Other Category:Other
Mfg:ASAHIKASEI Pack:DIP-4 D/C:4 Vendor:Other Category:Other
Mfg:ASAHIKASEI Pack:DIP-4 D/C:2006 Vendor:Other Category:Other
D/C:03+ Vendor:Other Category:Other
Mfg:AMK Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:W Pack:7991 D/C:1 Vendor:Other Category:Other
Mfg:TOSHIBA Pack:SOT-4 D/C:02+ Vendor:Other Category:Other
Mfg:373 Pack:1808 D/C:05+NOPB Vendor:Other Category:Other
Mfg:N/A Vendor:Other Category:Other
Vendor:Other Category:Other
Metal Alloy Resistor, Special Purpose, High Voltage
Vendor:Other Category:Other
The high power HVV1214-075 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2GHz to 1.4GHz.
Vendor:Other Category:Other
The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2 GHz to 1.4 GHz.
Vendor:Other Category:Other
The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz. The high voltage HVVFET™ technology produces over 250W of ...
Vendor:Other Category:Other
HVV1012-100, designed for L-Band pulsed radar applications operating over the frequency range from 1025 MHz to 1150 MHz.The high power HVV1012-100 device is a high voltage silicon enhancement mode RF transistor designed ...
Vendor:Other Category:Other
The high power HVV1012-060 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed avionics applications operating over the frequency range from 1025MHz to 1150MHz.
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