HWL27YRA

Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• Greater than 17 dB Gain• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 2mA TCH Channel Tem...

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SeekIC No. : 004367996 Detail

HWL27YRA: Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• Greater than 17 dB Gain• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V VGS ...

floor Price/Ceiling Price

Part Number:
HWL27YRA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/20

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Product Details

Description



Features:

• Low Cost GaAs Power FET
• Class A or Class AB Operation
• Greater than 17 dB Gain
• 5V to 10V Operation



Specifications

VDS Drain to Source Voltage +15V
VGS Gate to Source Voltage -5V
ID Drain Current IDSS
IG Gate Current 2mA
TCH Channel Temperature 175°C
TSTG Storage Temperature -65 to +175°C
PT Power Dissipation 3.5W
* mounted on an infinite heat sink


Description

The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package.


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