Features: • Plastic Packaged GaAs Power FET• Suitable for Commercial Wireless Applications• High Efficiency• 3V to 6V OperationSpecifications VDS Drain to Source Voltage +7V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 1mA TC...
HWL26NPA: Features: • Plastic Packaged GaAs Power FET• Suitable for Commercial Wireless Applications• High Efficiency• 3V to 6V OperationSpecifications VDS Drain to Source Voltag...
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VDS | Drain to Source Voltage | +7V |
VGS | Gate to Source Voltage | -5V |
ID | Drain Current | IDSS |
IG | Gate Current | 1mA |
TCH | Channel Temperature | 150°C |
TSTG | Storage Temperature | -65 to +150°C |
PT | Power Dissipation | 2 W |
The HWL26NPA is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.