Features: • Plastic Packaged GaAs Power FET• Suitable for Commercial Wireless Applications• High Efficiency• 3V to 6V OperationSpecifications VDSVGSIDIGTCHTSTGPT Drain to Source VoltageGate to Source VoltageDrain CurrentGate CurrentChannel TemperatureStorage Tempe...
HWL26NPB: Features: • Plastic Packaged GaAs Power FET• Suitable for Commercial Wireless Applications• High Efficiency• 3V to 6V OperationSpecifications VDSVGSIDIGTCHTSTGPT Dr...
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VDS VGS ID IG TCH TSTG PT |
Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation |
+7V -5V IDSS 1mA 150 -65 to +150 0.7 W |
The HWL26NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.