Features: · Low Cost GaAs Power FET· Class A or Class AB Operation· 17 dB Typical Gain at 2.4 GHz· 5V to 10V OperationSpecifications VDS Drain to SourceVoltage +15V VGS Gate to Source Voltage -5V IO Drain Current IDSS IG Gate Current 1 mA TCH Channel Temperature 175 T...
HWL26NC: Features: · Low Cost GaAs Power FET· Class A or Class AB Operation· 17 dB Typical Gain at 2.4 GHz· 5V to 10V OperationSpecifications VDS Drain to SourceVoltage +15V VGS Gate to Source Vol...
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VDS | Drain to Source Voltage |
+15V |
VGS | Gate to Source Voltage | -5V |
IO | Drain Current | IDSS |
IG | Gate Current | 1 mA |
TCH | Channel Temperature | 175 |
TSTG | Storage Temperature | -65 to +175 |
Pt | Power Dissipation | 1.7 W |