Features: • High Power Gain• Excellent Ruggedness• 48V Supply VoltageDescriptionHVV1012-100, designed for L-Band pulsed radar applications operating over the frequency range from 1025 MHz to 1150 MHz.The high power HVV1012-100 device is a high voltage silicon enhancement mode RF ...
HVV1012-100: Features: • High Power Gain• Excellent Ruggedness• 48V Supply VoltageDescriptionHVV1012-100, designed for L-Band pulsed radar applications operating over the frequency range from 1...
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Features: SpecificationsDescription The HVV1011-035 has the following features including high powe...
Features: • Silicon MOSFET Technology• Operation from 24V to 50V• High Power Gai...
Features: • High Power Gain• Excellent Ruggedness• 48V Supply VoltageDescription...
HVV1012-100, designed for L-Band pulsed radar applications operating over the frequency range from 1025 MHz to 1150 MHz.
The high power HVV1012-100 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed avionics applications operating over the frequency range from 1025MHz to 1150MHz, voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1025 MHz to 1150 MHz.
HVV1012-100, operating over the frequency range from 1025 MHz to 1150 MHz.