Features: • Silicon MOSFET Technology• Operation from 24V to 50V• High Power Gain• Extreme Ruggedness• Internal Input and Output Matching• Excellent Thermal Stability• All Gold Bonding SchemeDescriptionThe high power HVV1011-300 device is an enhancement mo...
HVV1011-300: Features: • Silicon MOSFET Technology• Operation from 24V to 50V• High Power Gain• Extreme Ruggedness• Internal Input and Output Matching• Excellent Thermal Stabi...
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Features: SpecificationsDescription The HVV1011-035 has the following features including high powe...
Features: • High Power Gain• Excellent Ruggedness• 48V Supply VoltageDescription...
Features: • High Power Gain• Excellent Ruggedness• 48V Supply VoltageDescription...
The high power HVV1011-300 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 1090MHz. The high voltage HVVFET™ technology produces over 300W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.