HVV1011-300

Features: • Silicon MOSFET Technology• Operation from 24V to 50V• High Power Gain• Extreme Ruggedness• Internal Input and Output Matching• Excellent Thermal Stability• All Gold Bonding SchemeDescriptionThe high power HVV1011-300 device is an enhancement mo...

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HVV1011-300 Picture
SeekIC No. : 004367940 Detail

HVV1011-300: Features: • Silicon MOSFET Technology• Operation from 24V to 50V• High Power Gain• Extreme Ruggedness• Internal Input and Output Matching• Excellent Thermal Stabi...

floor Price/Ceiling Price

Part Number:
HVV1011-300
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/22

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Product Details

Description



Features:

• Silicon MOSFET Technology
• Operation from 24V to 50V
• High Power Gain
• Extreme Ruggedness
• Internal Input and Output Matching
• Excellent Thermal Stability
• All Gold Bonding Scheme



Description

The high power HVV1011-300 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 1090MHz. The high voltage HVVFET™ technology produces over 300W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.




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