HWL36YRF

Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• Typical 13 dB Gain• 5V to 10V OperationSpecificationsVDS Drain to Source Voltage ........+15VVGS Gate to Source Voltage ...........-5VID Drain Current............................IDSSIG Gate Current 10mATCH ...

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HWL36YRF Picture
SeekIC No. : 004368006 Detail

HWL36YRF: Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• Typical 13 dB Gain• 5V to 10V OperationSpecificationsVDS Drain to Source Voltage ........+15VVGS Gate to S...

floor Price/Ceiling Price

Part Number:
HWL36YRF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

• Low Cost GaAs Power FET
• Class A or Class AB Operation
• Typical 13 dB Gain
• 5V to 10V Operation





Specifications

VDS Drain to Source Voltage ........+15V
VGS Gate to Source Voltage ...........-5V
ID Drain Current............................IDSS
IG Gate Current 10mA
TCH Channel Temperature .......175°C
TSTG Storage Temperature... -65 to +175°C
PT * Power Dissipation ...............15W





Description

The HWL36YRF is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package.






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