Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• Typical 13 dB Gain• 5V to 10V OperationSpecificationsVDS Drain to Source Voltage ........+15VVGS Gate to Source Voltage ...........-5VID Drain Current............................IDSSIG Gate Current 10mATCH ...
HWL36YRF: Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• Typical 13 dB Gain• 5V to 10V OperationSpecificationsVDS Drain to Source Voltage ........+15VVGS Gate to S...
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The HWL36YRF is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package.