Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• Typical 16.5 dB Gain• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 3 mA TCH Channel Tempe...
HWL30YRA: Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• Typical 16.5 dB Gain• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V VGS Ga...
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VDS | Drain to Source Voltage | +15V |
VGS | Gate to Source Voltage | -5V |
ID | Drain Current | IDSS |
IG | Gate Current | 3 mA |
TCH | Channel Temperature | 175°C |
TSTG | Storage Temperature | -65 to +175°C |
PT* | Power Dissipation | 6W |
The HWL30YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package.