HWL30NPA

Features: • Low Cost GaAs Power FETs• Class A or Class AB Operation• High Efficiency• 3V to 6V OperationSpecifications VDS Drain to Source Voltage +7V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 3mA TCH Channel Temperature ...

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SeekIC No. : 004367998 Detail

HWL30NPA: Features: • Low Cost GaAs Power FETs• Class A or Class AB Operation• High Efficiency• 3V to 6V OperationSpecifications VDS Drain to Source Voltage +7V VGS Gate to ...

floor Price/Ceiling Price

Part Number:
HWL30NPA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/20

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Product Details

Description



Features:

• Low Cost GaAs Power FETs
• Class A or Class AB Operation
• High Efficiency
• 3V to 6V Operation





Specifications

VDS Drain to Source Voltage +7V
VGS Gate to Source Voltage -5V
ID Drain Current IDSS
IG Gate Current 3mA
TCH Channel Temperature 150
TSTG Storage Temperature -65 to +150
PT Total Power Dissipation 2.8W
* mounted on an infinite heat sink.





Description

The HWL30NPA is a Medium Power GaAs FET using surface mount type plastic package for various L-band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.






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