Features: • Low Cost GaAs Power FETs• Class A or Class AB Operation• High Efficiency• 3V to 6V OperationSpecifications VDS Drain to Source Voltage +7V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 3mA TCH Channel Temperature ...
HWL30NPA: Features: • Low Cost GaAs Power FETs• Class A or Class AB Operation• High Efficiency• 3V to 6V OperationSpecifications VDS Drain to Source Voltage +7V VGS Gate to ...
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VDS | Drain to Source Voltage | +7V |
VGS | Gate to Source Voltage | -5V |
ID | Drain Current | IDSS |
IG | Gate Current | 3mA |
TCH | Channel Temperature | 150 |
TSTG | Storage Temperature | -65 to +150 |
PT | Total Power Dissipation | 2.8W |
The HWL30NPA is a Medium Power GaAs FET using surface mount type plastic package for various L-band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.