Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• 11 dB Typical Gain at 4 GHz• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5 V ID Drain Current IDSS IG Gate Current 2m...
HWC27NC: Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• 11 dB Typical Gain at 4 GHz• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
VDS |
Drain to Source Voltage |
+15V |
VGS |
Gate to Source Voltage |
-5 V |
ID |
Drain Current |
IDSS |
IG |
Gate Current |
2mA |
TCH |
Channel Temperature |
175 |
TSTG |
Storage Temperature |
- 65 to +175 |
PT |
Power Dissipation |
2mA |
The HWC27NC is a medium power GaAs FET designed for various L-band & S-band applications.