HVV1214-025

Features: • High Power Gain• Excellent Ruggedness• 48V Supply Voltage• High Power Gain• Excellent Ruggedness• 48V Supply VoltageSpecifications Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX D...

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HVV1214-025 Picture
SeekIC No. : 004367944 Detail

HVV1214-025: Features: • High Power Gain• Excellent Ruggedness• 48V Supply Voltage• High Power Gain• Excellent Ruggedness• 48V Supply VoltageSpecifications Symbol Parame...

floor Price/Ceiling Price

Part Number:
HVV1214-025
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/20

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Product Details

Description



Features:

• High Power Gain
• Excellent Ruggedness
• 48V Supply Voltage


• High Power Gain
• Excellent Ruggedness
• 48V Supply Voltage







Specifications

Symbol Parameter Value Unit
VDSS Drain-Source Voltage 105 V
VGS Gate-Source Voltage 10 V
IDSX Drain Current 2 A
PD2 Power Dissipation 116 W
TS Storage Temperature -65 to +200
TJ Junction Temperature 200





Description

The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2 GHz to 1.4 GHz.






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