Features: • High Power Gain• Excellent Ruggedness• 48V Supply Voltage• High Power Gain• Excellent Ruggedness• 48V Supply VoltageSpecifications Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX D...
HVV1214-025: Features: • High Power Gain• Excellent Ruggedness• 48V Supply Voltage• High Power Gain• Excellent Ruggedness• 48V Supply VoltageSpecifications Symbol Parame...
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Features: SpecificationsDescription The HVV1011-035 has the following features including high powe...
Features: • Silicon MOSFET Technology• Operation from 24V to 50V• High Power Gai...
Features: • High Power Gain• Excellent Ruggedness• 48V Supply VoltageDescription...
Symbol | Parameter | Value | Unit |
VDSS | Drain-Source Voltage | 105 | V |
VGS | Gate-Source Voltage | 10 | V |
IDSX | Drain Current | 2 | A |
PD2 | Power Dissipation | 116 | W |
TS | Storage Temperature | -65 to +200 | |
TJ | Junction Temperature | 200 |
The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2 GHz to 1.4 GHz.