Features: · High Power Gain· Excellent Ruggedness· 48V Supply VoltageSpecifications Symbol Parameter Value Unit VDSS Drain-source voltage 95 V VGS Gate-source voltage 10 V IDSX Drain current 8 A PD2 Power Dissipation 250 W Ts S...
HVV1214-075: Features: · High Power Gain· Excellent Ruggedness· 48V Supply VoltageSpecifications Symbol Parameter Value Unit VDSS Drain-source voltage 95 V VGS Gate-source volt...
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Features: SpecificationsDescription The HVV1011-035 has the following features including high powe...
Features: • Silicon MOSFET Technology• Operation from 24V to 50V• High Power Gai...
Features: • High Power Gain• Excellent Ruggedness• 48V Supply VoltageDescription...
· High Power Gain
· Excellent Ruggedness
· 48V Supply Voltage
Symbol |
Parameter |
Value |
Unit |
VDSS |
Drain-source voltage |
95 |
V |
VGS |
Gate-source voltage |
10 |
V |
IDSX |
Drain current |
8 |
A |
PD2 |
Power Dissipation |
250 |
W |
Ts |
Storage temperature |
-65 to +200 |
|
TJ |
Junction Temperature |
200 |
The high power HVV1214-075 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2GHz to 1.4GHz.