HWF1686NC

Features: ·Output Power: P1dB=30dBm(typ.)·High Gain: GL=15dB(typ.)·High Efficiency: PAE =45%(typ.)·High Linearity: IP3=45dBm(typ.)·Class A or Class AB OperationSpecifications VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current IDSS ...

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HWF1686NC Picture
SeekIC No. : 004367981 Detail

HWF1686NC: Features: ·Output Power: P1dB=30dBm(typ.)·High Gain: GL=15dB(typ.)·High Efficiency: PAE =45%(typ.)·High Linearity: IP3=45dBm(typ.)·Class A or Class AB OperationSpecifications VDS Drain to ...

floor Price/Ceiling Price

Part Number:
HWF1686NC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/20

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Product Details

Description



Features:

·Output Power: P1dB=30dBm(typ.)
·High Gain: GL=15dB(typ.)
·High Efficiency: PAE =45%(typ.)
·High Linearity: IP3=45dBm(typ.)
·Class A or Class AB Operation





Specifications

VDS
Drain to Source Voltage
+15V
VGS
Gate to Source Voltage
-5V
ID
Drain Current
IDSS
IG
Gate Current
2mA
TCH
Channel Temperature
175
TSTG
Storage Temperature
-65 to +175
PT
Power Dissipation
3.5W
* mounted on an infinite heat sink




Description

Designed for various RF and Microwave applications, the HWF1686NC is a medium power GaAs MESFET chip with 2 mm gate width and 0.7 m gate length.






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