Features: ·Output Power: P1dB=30dBm(typ.)·High Gain: GL=15dB(typ.)·High Efficiency: PAE =45%(typ.)·High Linearity: IP3=45dBm(typ.)·Class A or Class AB OperationSpecifications VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current IDSS ...
HWF1686NC: Features: ·Output Power: P1dB=30dBm(typ.)·High Gain: GL=15dB(typ.)·High Efficiency: PAE =45%(typ.)·High Linearity: IP3=45dBm(typ.)·Class A or Class AB OperationSpecifications VDS Drain to ...
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VDS |
Drain to Source Voltage |
+15V |
VGS |
Gate to Source Voltage |
-5V |
ID |
Drain Current |
IDSS |
IG |
Gate Current |
2mA |
TCH |
Channel Temperature |
175 |
TSTG |
Storage Temperature |
-65 to +175 |
PT |
Power Dissipation |
3.5W |
Designed for various RF and Microwave applications, the HWF1686NC is a medium power GaAs MESFET chip with 2 mm gate width and 0.7 m gate length.