Features: ·Output Power: P1dB=30dBm(typ.)·High Gain: GL=16dB(typ.)·High Efficiency: PAE=45%(typ.)·High Linearity: IP3=45dBm(typ.)Specifications VDSVGSIDIGTCHTSTGPT* Drain to Source Voltage Gate to Source VoltageDrain CurrentGate CurrentChannel TemperatureStorage TemperaturePower Dissipat...
HWF1686YC: Features: ·Output Power: P1dB=30dBm(typ.)·High Gain: GL=16dB(typ.)·High Efficiency: PAE=45%(typ.)·High Linearity: IP3=45dBm(typ.)Specifications VDSVGSIDIGTCHTSTGPT* Drain to Source Voltage...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
VDS VGS ID IG TCH TSTG PT * |
Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation |
+15V -5V IDSS 2mA 175°C -65 to +175°C 5.4W |
Designed for various RF and Microwave applications, the HWF1686YC is a medium power GaAs MESFET chip with 2 mm gate width and 0.7 m gate length.